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IRFP360

23A,400V,0.200Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP360

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

IRF

International Rectifier

IRFP360

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

MegaMOSFET

Features ?Fastswitchingtimes ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutingdv/dtrating Applications ?DCchoppers ?MotorControls ?Switch-modeandresonant-mode ?Uninterruptablepowersupplies(UPS) Adva

IXYS

IXYS Corporation

IRFP360

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ?FastSwitching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP360

Avalanche-Energy-RatedN-ChannelPowerMOSFETs

TheIRFP360andIRFP362areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperationThesearen-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingre

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP360

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

PowerMOSFET

FEATURES ?DynamicdV/dtrated ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP360LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    IRFM360UZG

  • 制造商:

    International Rectifier

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IR
22+
TO-254AA
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
23+
TO-254AA
8000
只做原裝現(xiàn)貨
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IR
23+
TO-254AA
7000
詢價(jià)
IOR
22+
TO-3
4500
全新原裝品牌專營(yíng)
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IR
23+
TO-3
5000
原裝正品,假一罰十
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ir
24+
N/A
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
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IOR
2020+
TO-3
35000
公司100%原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)特價(jià)熱賣,量大可訂。
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IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IR
24+
NA
200
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
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IR
24+
TO-220
66800
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更多IRFM360UZG供應(yīng)商 更新時(shí)間2025-3-10 10:00:00