首頁 >IRFN054SCX>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELPOWERMOSFET VDSS60V ID(cont)45A RDS(on)0.027? FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES | SEME-LAB Seme LAB | SEME-LAB | ||
PowerMOSFET(Vdss=60V,Rds(on)=0.014ohm,Id=70*A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | TFUNKVishay Telefunken 威世威世(VISHAY)集團 | TFUNK | ||
N-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=70A@TC=25℃ ?DrainSourceVoltage-:VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.014Ω(Max) ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=81A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor ?DESCRITION ?UltraLowOn-resistance ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤12m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedProcessTechnology Description TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole. ●AdvancedProcessTechnology ●Dynamicdv/dt | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-247packaging ?Uninterruptiblepowersupply ?Highspeedswitching ?Simpledriverequirements ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=60V,Rds(on)=9.0mohm,Id=93A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRFN054SCX
- 制造商:
International Rectifier
- 功能描述:
TRANS MOSFET N-CH 60V 55A 3SMD-1 - Bulk
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
C-CCN-3 |
14253 |
原包裝原標現(xiàn)貨,假一罰十, |
詢價 | ||
INFINEON |
23+ |
SMD-1 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
SMD-1 |
7000 |
詢價 | |||
IR |
22+ |
SMD-1 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
SML |
18 |
SMD |
200 |
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價 | ||
SML |
23+ |
SMD |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源! |
詢價 | ||
24+ |
長期備有現(xiàn)貨 |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
SML |
QQ咨詢 |
SMD |
63 |
全新原裝 研究所指定供貨商 |
詢價 | ||
SML |
2318+ |
SMD |
4862 |
只做進口原裝!假一賠百!自己庫存價優(yōu)! |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 |
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