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IRFN250

SimpleDriveRequirements

IRF

International Rectifier

IRFN250SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP250

N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRFP250

N-ChannelPowerMosfets

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP250

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFP250

N-Channel(HexfetTransistors)

IRF

International Rectifier

IRFP250

PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP250

StandardPowerMOSFET

N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols

IXYS

IXYS Corporation

IRFP250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP250

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFM250

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA

  • 功能描述：

    TRANS MOSFET N-CH 200V 27.4A 3PIN TO-254AA - Bulk

  • 功能描述：

    N CH MOSFET, 200V, 27.4A, TO-254AA; Transistor

  • Polarity：

    N Channel; Continuous Drain Current

  • Id：

    27.4A; Drain Source Voltage

  • Vds：

    200V; On Resistance

  • Rds(on)：

    100mohm; Rds(on) Test Voltage

  • Vgs：

    10V; Threshold Voltage Vgs

  • Typ：

    4V ;RoHS

  • Compliant：

    No

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
16+
TO-254
200
百分之百優(yōu)勢產(chǎn)品,全新原裝,可開13%增票!
 詢價
IR
24+
TO-254
66800
原廠授權(quán)一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力！
 詢價
IR
16+
TO-254
160
全新原裝 研究所指定供貨商
 詢價
IR
24+
DIP
6
詢價
IR
2020+
TO-3P
4
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
23+
TO254
8653
全新原裝優(yōu)勢
 詢價
IR
17+
DIP
9888
全新進口原裝,現(xiàn)貨庫存
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
24+
SMD
30
“芯達(dá)集團”專營軍工百分之百原裝進口
 詢價
IR
18+
TO-254AA
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
更多IRFM250供應(yīng)商 更新時間2025-3-31 16:31:00

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