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首頁 >IRFU120A>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFU120A	文件：397.82 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFU120ATU	文件：258.5 Kbytes Page：7 Pages	Avalanche Rugged Technology	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFU120N	文件：152.65 Kbytes Page：10 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRFU120N	文件：3.73792 Mbytes Page：10 Pages	SurfaceMount(IRFR120N)	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120N	文件：247.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFU120NPBF	文件：395.05 Kbytes Page：11 Pages	FastSwitching VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes	IRF International Rectifier	IRF
IRFU120NPBF	文件：4.0085 Mbytes Page：10 Pages	SurfaceMount(IRFR120N)StraightLead(IRFU120N) VDSS=100V RDS(on)=0.21? ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120NPBF	文件：1.08076 Mbytes Page：9 Pages	N-Channel100-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
IRFU120PBF	文件：2.12101 Mbytes Page：10 Pages	HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.27廓,ID=7.7A)	IRF International Rectifier	IRF
IRFU120PBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU120PBF	文件：4.22483 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120PBF	文件：838.17 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU120TR	文件：179.46 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str	IRF International Rectifier	IRF
IRFU120Z	文件：263.99 Kbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	IRF International Rectifier	IRF
IRFU120Z	文件：4.26012 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120Z	文件：247.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFU120ZPBF	文件：263.99 Kbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	IRF International Rectifier	IRF
IRFU120ZPBF	文件：4.27158 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU120ZPBF	文件：4.26012 Mbytes Page：11 Pages	AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFY120	文件：14.34 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS	SEME-LAB Seme LAB	SEME-LAB

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詳細(xì)參數(shù)

型號：
IRFU120A
制造商：
FAIRCHILD
制造商全稱：
Fairchild Semiconductor
功能描述：
Advanced Power MOSFET

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市星佑電子有限公司	IRFU120A	仙童	06+	TO-251	5000	原裝庫存	詢價
深圳市昌和盛利電子有限公司	IRFU120A	FAIRCHILD	23+	TO-251	9526		詢價
深圳市博浩通科技有限公司	IRFU120A	IR/FSC	23+	TO-251	9500	專業(yè)優(yōu)勢供應(yīng)	詢價
深圳市永貝爾科技有限公司	IRFU120A	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價
上海意淼電子科技有限公司	IRFU120A	FSC	23+	NA	12000	全新原裝假一賠十	詢價
深圳市鼎欣微電子有限公司	IRFU120A	IR	21+	TO-251	30000	只做正品原裝現(xiàn)貨	詢價
京海半導(dǎo)體(深圳)有限公司	IRFU120A	IR/VISHAY	21+	TO-251-3	10000	原裝現(xiàn)貨假一罰十	詢價
深圳市河鋒鑫科技有限公司	IRFU120A	IR	22+	TO-251-3	6000	十年配單,只做原裝	詢價
深圳市威雅利發(fā)展有限公司	IRFU120A	FSC	11+	TO-251	2100	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
深圳市得捷芯城科技有限公司	IRFU120A	FAIRCHILD/仙童	23+	NA/	7445	原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票	詢價

更多IRFU120A供應(yīng)商更新時間2024-11-16 10:32:00

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