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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFY430M	文件：18.44 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS	SEME-LAB Seme LAB	SEME-LAB
IRGB430	文件：253.25 Kbytes Page：6 Pages	INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGB430U	文件：253.25 Kbytes Page：6 Pages	INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGB430U	文件：98.39 Kbytes Page：35 Pages	FitRate/EquivalentDeviceHours	IRF International Rectifier	IRF
IRGP430U	文件：256.41 Kbytes Page：6 Pages	INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGP430U	文件：98.39 Kbytes Page：35 Pages	FitRate/EquivalentDeviceHours	IRF International Rectifier	IRF
IRK.430	文件：104.42 Kbytes Page：8 Pages	SUPERMAGN-A-pak-TMPowerModules Features ■Highcurrentcapability ■3000VRMSisolatingvoltagewithnon-toxicsubstrate ■Highsurgecapability ■Highvoltageratingsupto2000V ■Industrialstandardpackage ■ULrecognitionpending TypicalApplications ■Motorstarters ■DCmotorcontrols-ACmotorcontrols ■Unin	IRF International Rectifier	IRF
IRK430	文件：137.28 Kbytes Page：5 Pages	SUPERMAGN-A-PAK??PowerModules	IRF International Rectifier	IRF
ISCNL430W	文件：398.93 Kbytes Page：3 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXDD430	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDD430	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDD430CI	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDD430CI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDD430MCI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDD430MYI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDD430YI	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDD430YI	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDI430	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS
IXDI430	文件：619.61 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver	IXYS IXYS Corporation	IXYS
IXDI430CI	文件：781.94 Kbytes Page：12 Pages	30AmpLow-SideUltrafastMOSFET/IGBTDriver GeneralDescription TheIXDN430/IXDI430/IXDD430/IXDS430arehighspeedhighcurrentgatedriversspecificallydesignedtodriveMOSFETsandIGBTstotheirminimumswitchingtimeandmaximumpracticalfrequencylimits.TheIXD_430cansourceandsink30Aofpeakcurrentwhileproducingvoltager	IXYS IXYS Corporation	IXYS

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型號(hào)：
IRFY430CSCX
制造商：
International Rectifier
功能描述：
TRANS MOSFET N-CH 500V 4.5A 3PIN TO-257 - Bulk

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市川藍(lán)電子科技有限公司	IRFY430CSCX	INFINEON	23+	M-TO257-3	14253	原包裝原標(biāo)現(xiàn)貨,假一罰十,	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFY430CSCX	INFINEON	23+		8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFY430CSCX	INFINEON	23+		7000		詢價(jià)
深圳市河鋒鑫科技有限公司	IRFY430M	IR	22+		6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市晨豪科技有限公司	IRFY430-QR-EB	SEMELAB	23+	TO-257AA	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)
深圳市萊克訊科技有限公司	IRFY44	WSI		CDIP	3647	萊克訊每片來(lái)自原廠!價(jià)格超越代理!只做進(jìn)口原裝!	詢價(jià)
深圳市瑞祥輝半導(dǎo)體有限公司	IRFY44	IR	2318+	TO-3	4862	只做進(jìn)口原裝!假一賠百!自己庫(kù)存價(jià)優(yōu)!	詢價(jià)
深圳誠(chéng)思涵科技有限公司	IRFY440	IR	18+	TO	85600	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價(jià)
深圳市宇集芯電子有限公司	IRFY440	IR	24+	N/A	90000	原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理	詢價(jià)
深圳市鵬和科技有限公司	IRFY440	IR	24+		45	全新原裝	詢價(jià)

更多IRFY430CSCX供應(yīng)商更新時(shí)間2024-11-16 10:02:00

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