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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFZ46	文件：165.64 Kbytes Page：6 Pages	Power MOSFET(Vdss=50V, Rds(on)=0.024ohm, Id=50*A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ●Dynamicdv/dtRating ●175°COperatingTemperature ●FastSwitching ●EaseofParalleling	IRF International Rectifier	IRF
IRFZ46	文件：85.31 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier	IRF
IRFZ46	文件：110.7 Kbytes Page：2 Pages	HEXFET Power MOSFET TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ?Dynamicdv/dtRating ?175°COp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFZ46	文件：963.85 Kbytes Page：8 Pages	Power MOSFET FEATURES ?DynamicdV/dtRating ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Lead(Pb)-freeAvailable DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationoffastswitching, ruggediz	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFZ46L	文件：360.83 Kbytes Page：10 Pages	Advanced Process Technology Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFZ46N	文件：85.31 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A) Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier	IRF
IRFZ46N	文件：338.86 Kbytes Page：2 Pages	N-Channel MOSFET Transistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤16.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFZ46NL	文件：263.4 Kbytes Page：10 Pages	HEXFET POWER MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier	IRF
IRFZ46NLPBF	文件：678.64 Kbytes Page：10 Pages	HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRFZ46NPBF	文件：190.15 Kbytes Page：9 Pages	HEXFET? Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier	IRF
IRFZ46NS	文件：263.4 Kbytes Page：10 Pages	HEXFET POWER MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier	IRF
IRFZ46NSPBF	文件：678.64 Kbytes Page：10 Pages	HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRFZ46NSTRL	文件：263.4 Kbytes Page：10 Pages	HEXFET POWER MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier	IRF
IRFZ46NSTRR	文件：263.4 Kbytes Page：10 Pages	HEXFET POWER MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr	IRF International Rectifier	IRF
IRFZ46PBF	文件：963.85 Kbytes Page：8 Pages	Power MOSFET FEATURES ?DynamicdV/dtRating ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?SimpleDriveRequirements ?Lead(Pb)-freeAvailable DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethe designerwiththebestcombinationoffastswitching, ruggediz	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFZ46S	文件：341.21 Kbytes Page：10 Pages	HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFZ46Z	文件：289.71 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
IRFZ46ZL	文件：289.71 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
IRFZ46ZLPBF	文件：286.21 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb	IRF International Rectifier	IRF
IRFZ46ZPBF	文件：286.21 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb	IRF International Rectifier	IRF

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詳細參數(shù)

型號：
IRFZ46
功能描述：
MOSFET N-Chan 60V 50 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市勤思達科技有限公司	IRFZ46	IR	15+	TO-220	11560	全新原裝,現(xiàn)貨庫存,長期供應(yīng)	詢價
深圳市昌和盛利電子有限公司	IRFZ46	IR	23+	TO-220	35890		詢價
深圳市弘為電子有限公司	IRFZ46	IR	16+	原廠封裝	2646	原裝現(xiàn)貨假一罰十	詢價
深圳市博浩通科技有限公司	IRFZ46	IR	23+	TO220	6000	特價庫存	詢價
深圳市亞泰盈科電子有限公司	IRFZ46	IR		TO-220	10265	提供BOM表配單只做原裝貨值得信賴	詢價
深圳市永貝爾科技有限公司	IRFZ46	IRF	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳宇航軍工半導(dǎo)體有限公司	IRFZ46	IR	19+	9	75116	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價
深圳市華斯頓科技有限公司	IRFZ46	IR	22+23+	TO-220	30395	絕對原裝正品全新進口深圳現(xiàn)貨	詢價
深圳誠思涵科技有限公司	IRFZ46	IR	18+	TO-220	85600	保證進口原裝可開17%增值稅發(fā)票	詢價
深圳市賽爾通科技有限公司	IRFZ46	INF	23+	TO-220	65480		詢價

更多IRFZ46供應(yīng)商更新時間2024-12-23 11:04:00

詳細參數(shù)

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