零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFZ48N | N-channel enhancement mode TrenchMOS transistor N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowersuppliesandgenera | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | |
IRFZ48N | isc N-Channel MOSFET Transistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤14m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperatio | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IRFZ48N | HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | |
IRFZ48N | Fast Switching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=64A@TC=25℃ ?DrainSourceVoltage- :VDSS=55V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.014Ω(Max) ?FastSwitching | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFZ48N | N-Ch 60V Fast Switching MOSFETs SuperLowGateCharge 100EASGuaranteed GreenDeviceAvailable ExcellentCdV/dteffectdecline AdvancedhighcelldensityTrenchtechnology | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | |
IRFZ48N | SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | |
Advanced Process Technology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
N-Channel 60 V (D-S) MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Logic-LevelGateDrive ?FastSwitching ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
Advanced Process Technology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
Advanced Process Technology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
isc N-Channel MOSFET Transistor ?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchi | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFET Power MOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
N-Channel 60-V (D-S) MOSFET FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ADVANCED PROCESS TECHNOLOGY | IRF International Rectifier | IRF | ||
ADVANCED PROCESS TECHNOLOGY | IRF International Rectifier | IRF | ||
ADVANCED PROCESS TECHNOLOGY | IRF International Rectifier | IRF | ||
ADVANCED PROCESS TECHNOLOGY | IRF International Rectifier | IRF |
詳細(xì)參數(shù)
- 型號:
IRFZ48N
- 功能描述:
MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
50000 |
勤思達(dá)主營IR系列,全新原裝正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
2015+ |
500 |
公司現(xiàn)貨庫存 |
詢價(jià) | ||||
IR |
22+ |
原廠封裝 |
11025 |
原裝正品,實(shí)單請聯(lián)系 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
25000 |
代理原裝現(xiàn)貨,假一賠十 |
詢價(jià) | ||
IR |
24+ |
TO 220 |
161056 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
最新 |
DIP-8 |
6800 |
全新原裝公司現(xiàn)貨低價(jià) |
詢價(jià) | ||
IR |
2405+ |
TO-220 |
4475 |
只做原裝正品渠道訂貨 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
13+ |
TO220AB |
1000 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢量大可以發(fā)貨 |
詢價(jià) | ||
IR |
23+ |
原廠封裝 |
9526 |
詢價(jià) |
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