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IRGPC40

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGPC40F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGPC40FD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers

IRF

International Rectifier

IRGPC40K

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGPC40KD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort

IRF

International Rectifier

IRGPC40M

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGPC40MD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort

IRF

International Rectifier

IRGPC40S

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGPC40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGPC40UD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A)

Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers

IRF

International Rectifier

IRGPC40F

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40FD2

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40K

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40KD2

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40M

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40MD2

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40S

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40U

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40UD2

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRGPC40S

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT STD 600V 50A TO-247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRGPC40

  • 制造商:

    IRF

  • 制造商全稱(chēng):

    International Rectifier

  • 功能描述:

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-3P
1000
詢(xún)價(jià)
IR
23+
原廠原裝
6000
全新原裝
詢(xún)價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢(xún)價(jià)
IR
23+
TO
10000
公司只做原裝正品
詢(xún)價(jià)
IR
22+
TO
6000
十年配單,只做原裝
詢(xún)價(jià)
IR
23+
TO-3P
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢(xún)價(jià)
IR
23+
TO
6000
原裝正品,支持實(shí)單
詢(xún)價(jià)
IR
22+
TO-3P
4500
全新原裝品牌專(zhuān)營(yíng)
詢(xún)價(jià)
IR
22+
TO
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
詢(xún)價(jià)
IR
23+
TO
8000
只做原裝現(xiàn)貨
詢(xún)價(jià)
更多IRGPC40供應(yīng)商 更新時(shí)間2024-11-15 16:30:00