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AOB10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AOK10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AOT10B60D

600V,10AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

AOTF10B60D

AOTF10B60D

AOSMDAlpha & Omega Semiconductors

萬國(guó)半導(dǎo)體美國(guó)萬國(guó)半導(dǎo)體

FCF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

FCU10B60

FRD-ForPowerFactorImprovementHighFrequencyRecification

FEATURES *FullyMoldedIsolation *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

FSF10B60

FRED

NIEC

Nihon Inter Electronics Corporation

FSF10B60B

FRED

NIEC

Nihon Inter Electronics Corporation

FSU10B60

FORPOWERFACTORIMPROVEMENTHIGHFREQUENCYRECTIFICATION

FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

GB10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IKCM10B60GA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM10B60GA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKCM10B60HA

ControlIntegratedPOwerSystem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGB10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGB10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGS10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGS10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGSL10B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien

IRF

International Rectifier

IRGSL10B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRGS10B60KDPBF-EL

  • 制造商：

    International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON/英飛凌
2022+
DPAK-3
8000
只做原裝支持實(shí)單,有單必成。
 詢價(jià)
IR
2022
TO263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
INFINEON/英飛凌
2023+
DPAK-3
50000
AI智能識(shí)別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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Infineon Technologies
21+
D2PAK
800
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
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Infineon
1931+
N/A
493
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INFINEON
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
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INFINEON
22+
N/A
51800
優(yōu)勢(shì)價(jià)格原裝現(xiàn)貨提供BOM一站式配單服務(wù)
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IR
23+
D2PAK
10000
公司只做原裝正品
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更多IRGS10B60KDPBF-EL供應(yīng)商 更新時(shí)間2024-11-15 13:00:00

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