首頁 >IRGS10B60KDTRRPBF>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V,10AAlphaIGBTwithDiode GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
AOTF10B60D | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
FRED | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FRD-ForPowerFactorImprovementHighFrequencyRecification FEATURES *FullyMoldedIsolation *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FRED | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FRED | NIEC Nihon Inter Electronics Corporation | NIEC | ||
FORPOWERFACTORIMPROVEMENTHIGHFREQUENCYRECTIFICATION FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability | NIEC Nihon Inter Electronics Corporation | NIEC | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ControlIntegratedPOwerSystem | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransien | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru | IRF International Rectifier | IRF |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SOT263 |
9365 |
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
IR |
1923+ |
SOT263 |
3000 |
絕對進(jìn)口原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SOT263 |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價(jià) | ||
IR |
22+ |
TO-263 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
2023+環(huán)?，F(xiàn)貨 |
SOT263 |
60000 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價(jià) | ||
IR |
23+ |
TO-263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
2023+ |
SOT263 |
4365 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
7000 |
詢價(jià) |
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