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IRLR3103PBF

HEXFET? Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLR3105PBF

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRLR3105PBF

Logic-Level Gate Drive

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRLR3105TRPBF

Logic-Level Gate Drive

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom

IRF

International Rectifier

IRLR3110ZPBF

N-Channel Super Trench Power MOSFET

Features VDS=100V,ID=78A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRLR3303

Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRLR3303PBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewell

IRF

International Rectifier

IRLR3410

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering techniques. Powerdissipationlevelsupto1.5wattsarepossible intypicalsurfacemountapplications. Features VDS(V)=100V ID=17A(VGS=10V) RDS(ON)=105mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

IRLR3410TR

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering techniques. Powerdissipationlevelsupto1.5wattsarepossible intypicalsurfacemountapplications. Features VDS(V)=100V ID=17A(VGS=10V) RDS(ON)=105mW(VGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

IRLR3410TR

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering techniques. Powerdissipationlevelsupto1.5wattsarepossible intypicalsurfacemountapplications. Features VDS(V)=100V ID=17A(VGS=10V) RDS(ON)=105mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

詳細參數(shù)

  • 型號：

    IRLR3

  • 功能描述：

    MOSFET 30V 1 N-CH HEXFET 19mOhms 33.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
2016+
TO-252
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
17+
TO-252
6200
詢價
IR
2020+
原廠封裝
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-252
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
24+
D-pak
90000
一級代理商進口原裝現(xiàn)貨、價格合理
 詢價
IR
18+
TO-252
16250
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票
 詢價
IR/VISHAY
20+
TO-252
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
24+
65230
詢價
更多IRLR3供應商 更新時間2025-2-5 16:50:00

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