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IS61LV6416-10TL-TR

包裝:托盤 封裝/外殼:44-TSOP(0.400",10.16mm 寬) 類別:集成電路(IC) 存儲器 描述:IC SRAM 1MBIT PARALLEL 44TSOP II

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IC61LV6416-10B

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10BI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10K

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10KI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10T

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IC61LV6416-10TI

64Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10B

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10BI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10BI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-10BLI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-10K

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10K

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-10KI

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10KI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-10KLI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-10T

64KX16HIGHSPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheICSIIS61LV6416isahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswithl

ICSI

Integrated Circuit Solution Inc

IS61LV6416-10T

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV6416-10TI

64Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV6416/IS61LV6416Lisahigh-speed,1,048,576-bitstaticRAMorganizedas65,536wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IS61LV6416-10TL-TR

  • 制造商:

    ISSI, Integrated Silicon Solution Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術:

    SRAM - 異步

  • 存儲容量:

    1Mb(64K x 16)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    10ns

  • 電壓 - 供電:

    3.135V ~ 3.6V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    44-TSOP(0.400",10.16mm 寬)

  • 供應商器件封裝:

    44-TSOP II

  • 描述:

    IC SRAM 1MBIT PARALLEL 44TSOP II

供應商型號品牌批號封裝庫存備注價格
ISSI
23+
44-TSOPII
71890
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
ISSI
2016+
TSOP
5096
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價
ISSI
2020+
TSOP
18600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
ISSI
2016+
TSOP
6523
只做進口原裝現(xiàn)貨!或訂貨假一賠十!
詢價
ISSI
1716+
?
7500
只做原裝進口,假一罰十
詢價
ISSI
2020+
TSOP48
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
ISSI
20+
TSOP
65300
一級代理/放心購買!
詢價
ISSI
21+
TSOP44
25000
只做正品原裝現(xiàn)貨
詢價
ISSI
23+
TSOP
90000
只做原廠渠道價格優(yōu)勢可提供技術支持
詢價
ISSI
1931+
N/A
493
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
更多IS61LV6416-10TL-TR供應商 更新時間2024-11-1 17:10:00