DESCRIPTION

The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

? 100 percent bus utilization

? No wait cycles between Read and Write

? Internal self-timed write cycle

? Individual Byte Write Control

? Single R/W (Read/Write) control pin

? Clock controlled, registered address, data and control

? Interleaved or linear burst sequence control using MODE input

? Three chip enables for simple depth expansion and address pipelining

? Power Down mode

? Common data inputs and data outputs

? CKE pin to enable clock and suspend operation

? JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages

? Power supply:

NVP: VDD 2.5V (± 5), VDDQ 2.5V (± 5)

NLP: VDD 3.3V (± 5), VDDQ 3.3V/2.5V (± 5)

? JTAG Boundary Scan for PBGA packages

? Industrial temperature available

? Lead-free available

IS61NLP51218A-200TQ屬于集成電路（IC） > 存儲器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS61NLP51218A-200TQ存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。