IS62WV51216BLL-45B中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

? High-speed access time: 45ns, 55ns

? CMOS low power operation

– 36 mW (typical) operating

– 12 μW (typical) CMOS standby

? TTL compatible interface levels

? Single power supply

– 1.65V--2.2V VDD (62WV51216ALL)

– 2.5V--3.6V VDD (62WV51216BLL)

? Fully static operation: no clock or refresh required

? Three state outputs

? Data control for upper and lower bytes

? Industrial temperature available

? Lead-free available