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IXFK52N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.115Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK52N60Q2

Advanced Technical Information

HiPerFET?PowerMOSFETsQ2-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg LowintrinsicRg,lowtrr Features ?Doublemetalprocessforlowgateresistance ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?Avalancheenergyandcur

IXYS

IXYS Corporation

IXFK52N60Q2_08

HiPerFET Power MOSFETs Q2-Class

IXYS

IXYS Corporation

IXFX52N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=115mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號:

    IXFK52N60

  • 功能描述:

    MOSFET 52 Amps 600V 0.12 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
TO-264
8866
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
IXYS
24+
TO-3PL
267
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
詢價
IXYS/艾賽斯
21+
TO-264
10000
原裝現(xiàn)貨假一罰十
詢價
IXYS
22+
TO2643 TO264AA
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS/艾賽斯
23+
TO-264
6000
原裝正品,支持實單
詢價
更多IXFK52N60供應商 更新時間2025-1-23 15:30:00