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IXFK90N20Q

HiPerFET Power MOSFETs

HiPerFET?PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifier ?Fastswitching ?Moldi

IXYS

IXYS Corporation

IXFK90N20Q

HiPerFETTM Power MOSFETs Q-CLASS

IXYS

IXYS Corporation

IXFK90N20QS

HiPerFET Power MOSFETs

HiPerFET?PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifier ?Fastswitching ?Moldi

IXYS

IXYS Corporation

90N20

HiPerFETPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U

IXYS

IXYS Corporation

IIRFP90N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFBA90N20

PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=98A??

Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFBA90N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=98A??

Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFBA90N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFBA90N20DPBF

HEXFET?PowerMOSFET

Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFP90N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=94A??

Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFP90N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP90N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFP90N20DPBF

SMPSMOSFET

Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IXFH90N20Q

HiPerFETTMPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

IXFH90N20Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK90N20

HiPerFETPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U

IXYS

IXYS Corporation

IXFQ90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX90N20Q

HiPerFETTMPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFK90N20Q

  • 功能描述：

    MOSFET 200V 90A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Littelfuse/IXYS
23+
TO-264
7810
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
IXYS/艾賽斯
23+
TO-264
32189
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IXYS
05+
原廠原裝
6146
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IXYS
18+
TO-3PL
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
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IXYS
24+
TO-3PL
1344
詢價(jià)
IXYS
1931+
N/A
113
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IXYS
1809+
TO-264
326
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IXYS/艾賽斯
23+
TO-264
10000
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IXYS
22+
NA
113
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更多IXFK90N20Q供應(yīng)商 更新時(shí)間2024-10-24 16:49:00

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