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IRFBA90N20

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFBA90N20D

Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??

Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFBA90N20DPBF

HEXFET?Power MOSFET

Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFBA90N20DPBF

High frequency DC-DC converters

IRF

International Rectifier

IRFBA90N20DPBF_15

High frequency DC-DC converters

IRF

International Rectifier

IRFP90N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP90N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.023ohm,Id=94A??

Applications ?HighfrequencyDC-DCconverters Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFP90N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFP90N20DPBF

SMPSMOSFET

Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IXFH90N20Q

HiPerFETTMPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

IXFH90N20Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK90N20

HiPerFETPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U

IXYS

IXYS Corporation

IXFK90N20Q

HiPerFETTMPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

IXFK90N20Q

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifier ?Fastswitching ?Moldi

IXYS

IXYS Corporation

IXFK90N20QS

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETsQClass N-ChannelEnhancementMode AvalancheRated LowQg, Highdv/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastintrinsicrectifier ?Fastswitching ?Moldi

IXYS

IXYS Corporation

IXFQ90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX90N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX90N20Q

HiPerFETTMPowerMOSFETsQ-CLASS

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFBA90N20

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
23+
TO-220F
10000
公司只做原裝正品
 詢價(jià)
IR
22+
TO-220F
6000
十年配單,只做原裝
 詢價(jià)
IR
23+
TO-220F
6000
原裝正品，支持實(shí)單
 詢價(jià)
IR
22+
TO-220F
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
IR
23+
TO-220F
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-220F
7000
詢價(jià)
IR
24+
TO-TO-220F
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
IR
16+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
23+
Pak
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
更多IRFBA90N20供應(yīng)商 更新時(shí)間2025-1-3 9:01:00

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