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IXFN80N50Q2

HiPerFET Power MOSFET Q2-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRg,HighdV/dt,Lowtrr Features ?Doublemetalprocessforlowgateresistance ?miniBLOC,withAluminiumnitrideisolation ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?FastintrinsicRectifier Ap

IXYS

IXYS Corporation

IXFN80N50Q3

HiperFET Power MOSFET Q3-Class

VDSS=500V ID25=63A RDS(on)≤65mΩ trr≤250ns N-ChannelEnhancementMode FastIntrinsicRectifier Features InternationalStandardPackage LowIntrinsicGateResistance miniBLOCwithAluminumNitrideIsolation LowPackageInductance FastIntrinsicRectif

IXYS

IXYS Corporation

IXFN80N50Q2

Power MOSFET

IXYS

IXYS Corporation

IXFN80N50Q2_V01

Power MOSFET

IXYS

IXYS Corporation

IXFE80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?F

IXYS

IXYS Corporation

IXFK80N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK80N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFN80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductanc

IXYS

IXYS Corporation

IXFN80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductanc

IXYS

IXYS Corporation

IXFN80N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Fastintrinsicdiode ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?ULrecognized. ?Isolatedmountingbase Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFN80N50Q

  • 功能描述：

    MOSFET 80 Amps 500V 0.06 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
SOT-227B
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
22+
模塊
10000
原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
SOT-227
65000
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
德國(guó)IXYS艾塞斯
23+
MOUDLE
12000
原裝正品假一罰十支持實(shí)單
 詢價(jià)
IXYS/艾賽斯
12+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
 詢價(jià)
IXYS
23+
MOSFETN-CH500V80ASOT-227
1690
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
 詢價(jià)
IXYS
2023+
MODULE
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
IXYS
24+
2173
公司大量全新正品 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS
24+
SOT227
267
詢價(jià)
更多IXFN80N50Q供應(yīng)商 更新時(shí)間2025-2-9 14:14:00

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