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IXFQ28N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=260mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFQ28N60P3

Polar3 HiperFET Power MOSFETs

IXYS

IXYS Corporation

IXFQ28N60P3

Power MOSFET

IXYS

IXYS Corporation

IXFQ28N60P3_V01

Power MOSFET

IXYS

IXYS Corporation

IXGH28N60B

LowVIGBT

Features ●Internationalstandardpackages ●LowVCE(sat) -forminimumon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersup

IXYS

IXYS Corporation

IXGT28N60B

LowVIGBT

Features ●Internationalstandardpackages ●LowVCE(sat) -forminimumon-stateconductionlosses ●Highcurrenthandlingcapability ●MOSGateturn-on -drivesimplicity Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersup

IXYS

IXYS Corporation

SIHB28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF28N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHF28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG28N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHH28N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHH28N60E

ESeriesPowerMOSFET

FEATURES ?Completelylead(Pb)-freedevice ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Kelvinconnectionforreducedgatenoise ?Materialcategorization:forde

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP28N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP28N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IXFQ28N60

  • 功能描述:

    MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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華奧DHA
23+
TO3P
400000
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詢價(jià)
IXYS
18+
NA
3000
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IXYS
1931+
N/A
60
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IXYS
1809+
TO-3P
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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IXYS/艾賽斯
23+
TO3P
10000
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IXYS
22+
NA
60
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IXYS
22+
TO3P3 SC653
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IXYS
21+
TO3P3 SC653
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IXYS
22+
TO-3P
270
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303
詢價(jià)
IXYS/艾賽斯
23+
TO3P
6000
原裝正品,支持實(shí)單
詢價(jià)
更多IXFQ28N60供應(yīng)商 更新時(shí)間2024-12-30 14:49:00