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IXFX30N100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX30N100Q2

HiPerFET Power MOSFETs Q-Class

IXYS

IXYS Corporation

IXFX30N100Q2

HiPerFET Power MOSFETs Q2-Class

IXYS

IXYS Corporation

BW-30N100W

N-TypeFixedAttenuator

MINI

Mini-Circuits

IGW30N100T

LowLossIGBT:IGBTinTrenchStopandFieldstoptechnology

LowLossIGBT:IGBTinTrenchStop?andFieldstoptechnology ?TrenchStop?andFieldstoptechnologyfor1000Vapplications offers: -lowVCEsat -verytightparameterdistribution -highruggedness,temperaturestablebehavior -positivetemperaturecoefficientinVCEsat ?Designedf

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N100R

ReverseConductingIGBTwithmonolithicbodydiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N100R

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N100R

SoftSwitchingSeries

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N100T

SoftSwitchingSeries

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IHW30N100T

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithanti-paralleldiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXFK30N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTB30N100L

PowerMOSFETswithExtendedFBSOA

IXYS

IXYS Corporation

IXTB30N100L

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=450mΩ(Max)@VGS=20V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·TemperatureandLightingControls

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTN30N100L

N-ChannelPowerMOSFET

IXYS

IXYS Corporation

IXTN30N100L

PowerMOSFETswithExtendedFBSOA

IXYS

IXYS Corporation

RM30N100LD

N-ChannelEnhancementModePowerMOSFET

RECTRON

Rectron Semiconductor

詳細參數(shù)

  • 型號:

    IXFX30N100

  • 功能描述:

    MOSFET 30 Amps 1000V 0.35 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
2020+
TO-247
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
IXYS
18+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS
1809+
TO-247
96
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
PLUS247
10000
公司只做原裝正品
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
詢價
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
21+
TO2473
13880
公司只售原裝,支持實單
詢價
IXYS/艾賽斯
23+
PLUS247
6000
原裝正品,支持實單
詢價
更多IXFX30N100供應(yīng)商 更新時間2024-12-21 9:02:00