首頁 >IHW30N100R>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IHW30N100R | HighSpeed 2-Technology ?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IHW30N100R | Reverse Conducting IGBT with monolithic body diode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IHW30N100R | Soft Switching Series | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
IHW30N100R | 包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1000V 60A 412W TO247-3 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Soft Switching Series | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SoftSwitchingSeries | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithanti-paralleldiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=450mΩ(Max)@VGS=20V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·TemperatureandLightingControls | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFETswithExtendedFBSOA | IXYS IXYS Corporation | IXYS | ||
PowerMOSFETswithExtendedFBSOA | IXYS IXYS Corporation | IXYS | ||
N-ChannelPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IHW30N100R
- 制造商:
Infineon Technologies
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- IGBT 類型:
溝槽型場截止
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
1.7V @ 15V,30A
- 開關(guān)能量:
2.1mJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開/關(guān))值:
-/846ns
- 測試條件:
600V,30A,26 歐姆,15V
- 工作溫度:
-40°C ~ 175°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
PG-TO247-3-1
- 描述:
IGBT 1000V 60A 412W TO247-3
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
英飛翎 |
17+ |
TO-247 |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
INFINEON/英飛凌 |
21+23+ |
TO247 |
13133 |
16年電子元件現(xiàn)貨供應(yīng)商 終端BOM表可配單提供樣品 |
詢價(jià) | ||
INFINEON |
24+ |
PG-TO247-3 |
8866 |
詢價(jià) | |||
INFINEON |
23+ |
TO247 |
8600 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
24+ |
TO-247 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INFINEON |
2023+ |
TO-247 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) | ||
INFINEON |
1503+ |
TO247-3 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-247 |
6530 |
公司只做原裝正品 |
詢價(jià) | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) |
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