IXGB200N60B3分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單規(guī)格書PDF中文資料

IXGB200N60B3屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由IXYS Corporation制造生產(chǎn)的IXGB200N60B3晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個(gè)端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開(kāi)關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開(kāi)關(guān)能量和柵極電荷。

OVERVIEW

IXYS extends its GenX3? insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3? IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications allow designers to “dial in” the best compromise between static (conduction) and dynamic (switching) losses, improving over-all system efficiency in a variety of power conversion applications by balancing critical requirements such as switching frequency, efficiency, and cost structure. The A3-Class are optimized for low saturation voltage V(sat) and are well suited for applications requiring switching frequencies up to 5kHz. Similarly, the B3-Class offers low saturation voltages, but is optimized to accommodate applications that require “medium speed” switching operation from 5kHz to 40kHz. The C3-Class is optimized for “high speed” switching operation from 40kHz to 100kHz and resonant switching operation of up to 400kHz.