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IXGM20N60

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGM20N60A

LowVCE(sat)IGBT,HighspeedIGBT

LowVCE(sat)IGBTHighspeedIGBT Features lInternationalstandardpackages l2ndgenerationHDMOSTMprocess lLowVCE(sat) -forlowon-stateconductionlosses lHighcurrenthandlingcapability lMOSGateturn-on -drivesimplicity lVoltageratingguaranteedat

IXYS

IXYS Corporation

IXGP20N60B

HiPerFASTTMIGBT

IXYS

IXYS Corporation

IXGT20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features ?InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOSTMprocess ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXKC20N60C

CoolMOSPowerMOSFETinISOPLUS220Package

CoolMOS?PowerMOSFETinISOPLUS220?Package ElectricallyIsolatedBackSurface N-ChannelEnhancementMode LowRDS(on),SuperjunctionMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?

IXYS

IXYS Corporation

IXKC20N60C

iscN-ChannelMOSFETTransistor

?FEATURES ?Highpowerdissipation ?Staticdrain-sourceon-resistance: RDS(on)≤190m?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverters ?HighCurrentSwitchingApplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH20N60

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTH20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTM20N60

MegaMOSFET

MegaMOS?FET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

IXTM20N60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    IXGH20N60BS

  • 功能描述：

    TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247SMD

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
2018+
TO-3P
11256
只做進口原裝正品!假一賠十!
 詢價
IXYS
22+23+
TO-3P
13491
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
IXYS
2020+
TO-3P
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
MAXIM/美信
23+
DIP14
69820
終端可以免費供樣,支持BOM配單!
 詢價
IXYS
1503+
TO-247
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS
22+
TO247AD (IXGH)
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
TO247AD (IXGH)
13880
公司只售原裝,支持實單
 詢價
IXYS
23+
TO247AD (IXGH)
9000
原裝正品，支持實單
 詢價
IXYS/艾賽斯
0306+
TO-3P
1037
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多IXGH20N60BS供應(yīng)商 更新時間2025-3-8 15:58:00

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