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IXTH30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ30N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ30N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTT30N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTV30N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTV30N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTV30N60PS

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

K30N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

K30N60HS

HIGHSPEEDIGBTINNPT-TECHNOLOGY

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KGF30N60KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    IXSH30N60A

  • 制造商：

    IXYS

  • 制造商全稱：

    IXYS Corporation

  • 功能描述：

    Low VCE(sat) IGBT, High Speed IGBT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
 詢價(jià)
IXYS
24+
TO247
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
IXYS
1503+
TO-247
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IXYS/艾賽斯
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IXYS/艾賽斯
21+
TO247
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IXYS
22+
TO247AD (IXSH)
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IXYS/艾賽斯
2022
TO247
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
IXYS
21+
TO247AD (IXSH)
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
更多IXSH30N60A供應(yīng)商 更新時(shí)間2025-3-15 9:02:00

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