首頁 >IXSH50N60B>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXSH50N60B | Short Circuit SOA Capability IGBTHighSpeed ShortCircuitSOACapability Features ?Internationalstandardpackage JEDECTO-247AD,andTO-247SMDforsurfacemount ?GuaranteedShortCircuitSOAcapability ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?LowVCE(sat) -forminimumon-stateconducti | IXYS IXYS Corporation | IXYS | |
IXSH50N60B | 包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 75A 250W TO247 | IXYS IXYS Corporation | IXYS | |
KECFieldStopTrenchIGBTsofferlowswitchinglosses,highenergyefficiencyandshortcircuitruggedness. | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
Highspeedswitching | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
InsulatedGateBipolarTransistor(IGBT) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor(IGBT) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor(IGBT) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistor(IGBT) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
N-ChannelPowerMOSFET | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半導(dǎo)體東莞市平晶半導(dǎo)體科技有限公司 | PJSEMI | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=50A RDS(ON)16mΩ@VGS=10V RDS(ON)20mΩ@VGS=4.5V HighdensitycelldesignforultralowRdson Fullycharacterizedavalanchevoltageandcurrent GoodstabilityanduniformitywithhighEAS Excellentpackageforgoodheatdissipation | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=60V,ID=50A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
N-ChannelEnhancementModePowerMOSFET GeneralFeatures Vds=60Vo=50A Rds(on) | RECTRON Rectron Semiconductor | RECTRON | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
ShortCircuitRatedIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
ShortCircuitRatedIGBT GeneralDescription Fairchild?’sRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitching lossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol, uninterruptedpowersupplies(UPS)andgenerali | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
IXSH50N60B
- 制造商:
IXYS
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- IGBT 類型:
PT
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2.5V @ 15V,50A
- 開關(guān)能量:
3.3mJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開/關(guān))值:
70ns/150ns
- 測(cè)試條件:
480V,50A,2.7 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247AD
- 描述:
IGBT 600V 75A 250W TO247
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IXYS/艾賽斯 |
17+ |
TO-247 |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
IXYS |
24+ |
TO-247 |
8866 |
詢價(jià) | |||
IXYS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IXYS |
18+ |
TO-247 |
2050 |
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
IXYS |
1503+ |
TO-247 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
IXYS/艾賽斯 |
23+ |
TO-247 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
IXYS |
21+ |
TO247AD (IXSH) |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IXYS |
23+ |
TO247AD (IXSH) |
9000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
IXYS |
2022+ |
TO-247AD(IXSH) |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
IXYS |
24+ |
TO-247-3 |
9350 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) |
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