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IXTH1N100

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH1N100

HighVoltageMOSFET

N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho

IXYS

IXYS Corporation

IXTP1N100

HighVoltageMOSFET

HighVoltageMOSFET N-ChannelEnhancementMode AvalancheEnergyRated Features ?Internationalstandardpackages ?Highvoltage,LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Flyb

IXYS

IXYS Corporation

IXTP1N100P

PolarPowerMOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications

IXYS

IXYS Corporation

IXTP1N100P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤15?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-Mo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTT1N100

HighVoltageMOSFET

N-ChannelEnhancementMode AvalancheEnergyRated Features ●Internationalstandardpackages ●Highvoltage,LowRDS(on)HDMOS?process ●Ruggedpolysilicongatecellstructure ●Fastswitchingtimes Applications ●Switch-modeandresonant-modepowersupplies ●Flybackinverters ●DCcho

IXYS

IXYS Corporation

IXTY1N100P

PolarPowerMOSFET

PolarPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity Applications

IXYS

IXYS Corporation

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

DESCRIPTION TheMM196isaMulti-ChipModule,MCM,incorporating6independentMOSFETdieintoaconvenientBGApackage.ThisdeviceisalsoavailableasdiscreteindividualpackagedPowermite3,seeMicrosemidatasheetUPF1N100.Thisdeviceisalsoavailableasbaredie,seeMicrosemidatasheet

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MSAFA1N100D

FastMOSFETDieforImplantableCardioDefibrillatorApplications

MicrosemiMicrosemi Corporation

美高森美美高森美公司

MTB1N100E

TMOSPOWERFET1.0AMPERES1000VOLTS

TMOSPOWERFET1.0AMPERES1000VOLTSRDS(on)=9.0OHM TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細(xì)參數(shù)

  • 型號：

    IXTA1N100TRL

  • 制造商：

    IXYS Integrated Circuits Division

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
1726+
TO-263
6528
只做進(jìn)口原裝正品現(xiàn)貨,假一賠十!
 詢價
IXYS/艾賽斯
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IXYS/艾賽斯
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IXYS
24+
TO-263
8866
詢價
IXYS
23+
TO-263-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
IXYS
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-263
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
IXYS
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原廠渠道,現(xiàn)貨配單
 詢價
更多IXTA1N100TRL供應(yīng)商 更新時間2025-2-22 17:35:00

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