首頁 >K4H510838G-LC/LCC>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
K4H510838G-LC/LCC | 512Mb G-die DDR SDRAM Specification GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
DDRSDRAMProductGuide ConsumerMemory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung |
詳細參數(shù)
- 型號:
K4H510838G-LC/LCC
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
512Mb G-die DDR SDRAM Specification
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
TSOP66 |
2682 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
SAMSUNG |
17+ |
TSOP |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
SAMSUNG |
23+ |
TSOP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
SAMSUNG |
23+ |
TSOP |
8890 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
SAMSANG |
19+ |
TSOP |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
SAM |
23+ |
TSOP |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
SAMSUNG |
21+ |
TSOP |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
Samsung |
2020+ |
DDR64Mx8PC333PbF |
3850 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
SAMSUNG |
2023+ |
TSOP |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
SAMSUNG |
21+ |
TSOP |
65200 |
一級代理/放心采購 |
詢價 |
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