首頁(yè) >K4H511638D-UCC>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
K4H511638D-UCC | 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
DDRSDRAMProductGuide ConsumerMemory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung |
詳細(xì)參數(shù)
- 型號(hào):
K4H511638D-UCC
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free(RoHS compliant)
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
2014+ |
480 |
公司現(xiàn)貨庫(kù)存 |
詢價(jià) | |||
SAMSUNG |
24+ |
TSOP66 |
2568 |
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG |
17+ |
TSOP |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG |
24+ |
TSOP |
3125 |
詢價(jià) | |||
SAMSUNG |
2016+ |
ROHS |
5632 |
只做進(jìn)口原裝正品!現(xiàn)貨或者訂貨一周貨期!只要要網(wǎng)上有 |
詢價(jià) | ||
SAMSUNG |
2020+ |
TSSOP |
508 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
SAMSUNG |
23+ |
TSOP |
8890 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢 |
詢價(jià) | ||
SAMSUNG |
24+ |
TSOP |
200 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SAMSUSNG |
23+ |
TSOP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
SAMSUNG |
2016+ |
TSOP66 |
2880 |
只做原裝,假一罰十,公司優(yōu)勢(shì)內(nèi)存型號(hào)! |
詢價(jià) |
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