首頁 >K4H511638B-GC/LCC>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
K4H511638B-GC/LCC | 512Mb B-die DDR SDRAM Specification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
DDRSDRAMProductGuide ConsumerMemory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbF-dieDDRSDRAMSpecification ConsumerMemory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbF-dieDDRSDRAMSpecification ConsumerMemory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung |
詳細(xì)參數(shù)
- 型號:
K4H511638B-GC/LCC
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
512Mb B-die DDR SDRAM Specification
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMS |
6000 |
面議 |
19 |
DIP/SMD |
詢價 | ||
SAMSUNG |
24+ |
BGA |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
SAMSUNG/三星 |
2021+ |
BGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
SAMSUNG/三星 |
19+ |
BGA |
12731 |
進(jìn)口原裝現(xiàn)貨 |
詢價 | ||
SAMSUNG |
2020+ |
TSOP |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
SAMSUNG |
2023+ |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | |||
SAMSUNG/三星 |
23+ |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
samsung |
23+ |
TSSOP |
9980 |
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價 | ||
SAMSUNG |
24+ |
TSOP |
44 |
詢價 | |||
SAMSANG |
19+ |
TSSOP |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 |
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