首頁 >K4H511638B-UC/LCC>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
K4H511638B-UC/LCC | 512Mb B-die DDR SDRAM Specification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
512MbB-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbC-dieDDRSDRAMSpecification | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
DDRSDRAMProductGuide ConsumerMemory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbF-dieDDRSDRAMSpecification ConsumerMemory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbF-dieDDRSDRAMSpecification ConsumerMemory | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
512MbG-dieDDRSDRAMSpecification GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung |
詳細(xì)參數(shù)
- 型號(hào):
K4H511638B-UC/LCC
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
512Mb B-die DDR SDRAM Specification
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
22+ |
TSOP |
4650 |
詢價(jià) | |||
SAMSUNG |
2339+ |
QFP |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存! |
詢價(jià) | ||
SAMSUNG |
6000 |
面議 |
19 |
DIP/SMD |
詢價(jià) | ||
SAMSUNG |
2023+ |
QFP |
50000 |
原裝現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG |
2022 |
TSOP |
3268 |
原廠原裝正品,價(jià)格超越代理 |
詢價(jià) | ||
SAMSUNG |
2016+ |
TSSOP66 |
6526 |
只做原裝正品!假一賠十! |
詢價(jià) | ||
SAMSUNG |
23+ |
TSOP |
8890 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
SAMSUMG |
2021+ |
TSOP66 |
6381 |
百分百原裝正品 |
詢價(jià) | ||
SAMSANG |
19+ |
TSSOP66 |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | ||
SAMSUNG |
22+23+ |
TSSOP66 |
21720 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) |
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