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K4H511638G

512Mb G-die DDR SDRAM Specification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

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K4H511638G

Consumer Memory

SDRAMProductGuide MemoryDivision November2007

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K4H511638G-LC/LB3

512Mb G-die DDR SDRAM Specification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung semiconductor

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K4H511638G-LC/LCC

512Mb G-die DDR SDRAM Specification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung semiconductor

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K4H511638

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638B-G

512MbB-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638B-GC/LCC

512MbB-dieDDRSDRAMSpecification

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K4H511638B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl

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K4H511638B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl

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K4H511638B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-UC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-UCCC

512MbC-dieDDRSDRAMSpecification

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K4H511638C-ULCC

512MbC-dieDDRSDRAMSpecification

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K4H511638C-Z

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung semiconductor

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K4H511638C-ZLCC

512MbC-dieDDRSDRAMSpecification

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K4H511638D

DDRSDRAMProductGuide

ConsumerMemory

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K4H511638D

512MbD-dieDDRSDRAMSpecification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

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K4H511638D

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

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K4H511638D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

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詳細(xì)參數(shù)

  • 型號:

    K4H511638G

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    Consumer Memory

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
17+
TSOP
6200
100%原裝正品現(xiàn)貨
詢價
SAMSUNG
TSOP
1242
正品原裝--自家現(xiàn)貨-實單可談
詢價
SAMSUNG
2020+
TSOP
814
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
SAMSUNG
2022
TSOP66
2550
原廠原裝正品,價格超越代理
詢價
SAMSUNG
23+
TSSOP
5000
原裝正品,假一罰十
詢價
SAMSUNG
2016+
TSOP66
4000
只做原裝,假一罰十,公司優(yōu)勢內(nèi)存型號!
詢價
SAMSUNG
23+
BGA
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價
三星
2339+
NA
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
詢價
SAMSUNG
TSOP
27056
提供BOM表配單只做原裝貨值得信賴
詢價
SAMSUNG
2020+
TSSOP-66
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價
更多K4H511638G供應(yīng)商 更新時間2024-11-16 16:00:00