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LMG3422R030

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3422R030

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3422R030

LMG342xR030 600-V 30-m廓 GaN FET with Integrated Driver, Protection, and Temperature Reporting

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LMG3422R030

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LMG3422R030

LMG342xR030 600-V 30-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

TITexas Instruments

德州儀器美國(guó)德州儀器公司

LMG3422R030_V03

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3422R030_V04

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3422R030RQZR

Marking：LMG3422R030；Package：VQFN；LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3422R030RQZR

Marking：LMG3422R030；Package：VQFN；LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

LMG3422R030RQZT

Marking：LMG3422R030；Package：VQFN；LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1Features ?QualifiedforJEDECJEP180forhard-switching topologies ?600VGaN-on-SiFETwithintegratedgatedriver –Integratedhighprecisiongatebiasvoltage –200V/nsFEThold-off –2.2MHzswitchingfrequency –20V/nsto150V/nsslewrateforoptimizationof switchingperformancea

TI1Texas Instruments

德州儀器

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TI
24+
VQFN|54
8230
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
TI
25+
(RQZ)
6000
原廠原裝,價(jià)格優(yōu)勢(shì)!13246658303
 詢價(jià)
TI
23+
RQZ54
5000
全新原裝正品現(xiàn)貨
 詢價(jià)
TI/德州儀器
24+
VQFN54
2000
原裝/現(xiàn)貨/假一罰十
 詢價(jià)
TI/德州儀器
22+
VQFN54
3000
原裝正品
 詢價(jià)
TI(德州儀器)
24+
VQFN54
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
TI(德州儀器)
23+
VQFN-54(12x12)
13650
公司只做原裝正品,假一賠十
 詢價(jià)
Texas Instruments
23+/24+
54-VQFN
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
 詢價(jià)
Texas Instruments
25+
54-VQFN Exposed Pad
9350
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
更多LMG3422R030供應(yīng)商 更新時(shí)間2025-4-26 17:06:00

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