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M29W800AT	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT	文件：717.83 Kbytes Page：40 Pages	8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100M1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100M5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100M6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100N1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100N5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100N6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100ZA1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100ZA5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT100ZA6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120M1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120M5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120M6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120N1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120N5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120N6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120ZA1T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120ZA5T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS
M29W800AT120ZA6T	文件：234.79 Kbytes Page：33 Pages	8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory DESCRIPTION TheM29W800Aisanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWord-by-Wordbasisusingonlyasingle2.7Vto3.6VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedint	STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體（ST）集團	STMICROELECTRONICS

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詳細參數(shù)

型號：
M29W800AT
功能描述：
閃存 1Mx8 or 512Kx16 100n
RoHS：
否
制造商：
ON Semiconductor
數(shù)據(jù)總線寬度：
1 bit
存儲類型：
Flash
存儲容量：
2 MB
結(jié)構(gòu)：
256 K x 8
接口類型：
SPI
電源電壓-最大：
3.6 V
電源電壓-最?。?/span>
2.3 V
最大工作電流：
15 mA
工作溫度：
- 40 C to + 85 C
安裝風格：
SMD/SMT
封裝：
Reel

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市羿芯誠電子有限公司	M29W800AT	ST	23+	BGA	3220	原裝正品公司現(xiàn)貨價格優(yōu)惠歡迎查詢	詢價
深圳市一線半導體有限公司	M29W800AT		24+		3000	公司存貨	詢價
深圳市毅創(chuàng)騰電子科技有限公司	M29W800AT	ST	23+	TSSOP-48	7000	絕對全新原裝!100%保質(zhì)量特價!請放心訂購!	詢價
深圳市弘為電子有限公司	M29W800AT	ST	16+	BGA	750	原裝現(xiàn)貨假一罰十	詢價
深圳市佳鑫美電子科技有限公司	M29W800AT	ST	22+	TSSOP-48	3200	十年品牌!原裝現(xiàn)貨!!!	詢價
深圳市歐亞佳電子有限公司	M29W800AT	ST	20+	BGA	11520	特價全新原裝公司現(xiàn)貨	詢價
深圳市振芯物聯(lián)科技有限公司	M29W800AT	ST	22+	TSSOP48	32350	原裝正品假一罰十公司現(xiàn)貨	詢價
深圳市威爾健半導體有限公司	M29W800AT	NA	23+	TSSOP	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市安富世紀電子有限公司	M29W800AT	ST	23+	TSSOP48	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市富誠威科技有限公司	M29W800AT	ST/意法半導體	22+	BGA	2638	原裝正品!公司現(xiàn)貨!	詢價

更多M29W800AT供應商更新時間2024-10-26 14:40:00

詳細參數(shù)

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