首頁 >M58LW064BNH>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

M58LW064BNH

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064A

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064ANF

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064ANH

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064AT

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064AZA

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064B

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064BNF

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064BT

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064BZA

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064C

64Mbit(4Mbx16,UniformBlock,Burst)3VSupplyFlashMemory

SUMMARYDESCRIPTION M58LW064Cisa64Mbit(4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply.Onpower-upthememorydefaultstoReadmodewithanasynchronousbuswhereitcanbereadi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064D

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M58LW064D

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號:

    M58LW064BNH

  • 制造商:

    STMICROELECTRONICS

  • 制造商全稱:

    STMicroelectronics

  • 功能描述:

    64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

供應(yīng)商型號品牌批號封裝庫存備注價格
SMD
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
ST/意法
23+
BGA
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
ST
TSOP56
0724+
334
全新原裝進(jìn)口自己庫存優(yōu)勢
詢價
ST
24+
TSOP56
5000
只做原裝公司現(xiàn)貨
詢價
ST
17+
TSOP56
9988
只做原裝進(jìn)口,自己庫存
詢價
AlphaIndustries
23+
SOP
12000
全新原裝假一賠十
詢價
ST
19+
TSOP
32000
原裝正品,現(xiàn)貨特價
詢價
MIT
24+
IGBT驅(qū)動
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!
詢價
ST
TSOP56
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價
ST
22+
TSOP
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價
更多M58LW064BNH供應(yīng)商 更新時間2025-1-4 15:00:00