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M58LW064BT

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064A

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064ANF

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064ANH

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064AT

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064AZA

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064B

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064BNF

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064BNH

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064BZA

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064C

64Mbit(4Mbx16,UniformBlock,Burst)3VSupplyFlashMemory

SUMMARYDESCRIPTION M58LW064Cisa64Mbit(4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply.Onpower-upthememorydefaultstoReadmodewithanasynchronousbuswhereitcanbereadi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064D

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

M58LW064D

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SMD
2021+
SMD
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢(xún)價(jià)
ST/意法
23+
BGA
13000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢(xún)價(jià)
ST
TSOP56
0724+
334
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
詢(xún)價(jià)
ST
2022
TSOP
5280
原廠原裝正品,價(jià)格超越代理
詢(xún)價(jià)
ST
24+
TSOP56
5000
只做原裝公司現(xiàn)貨
詢(xún)價(jià)
ST
17+
TSOP56
9988
只做原裝進(jìn)口,自己庫(kù)存
詢(xún)價(jià)
AlphaIndustries
23+
SOP
12000
全新原裝假一賠十
詢(xún)價(jià)
ST
19+
TSOP
32000
原裝正品,現(xiàn)貨特價(jià)
詢(xún)價(jià)
MIT
2020+
IGBT驅(qū)動(dòng)
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!
詢(xún)價(jià)
ST
TSOP56
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢(xún)價(jià)
更多M58LW064BT供應(yīng)商 更新時(shí)間2024-11-8 15:00:00