首頁 >MCAC80N06Y>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
MCAC80N06Y | N-Channel Power MOSFET | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | |
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40 | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel60V(D-S)MOSFET FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization: | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
MCC/美微科 |
24+ |
DFN5060 |
360000 |
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量價格低 |
詢價 | ||
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
MCC(美微科) |
2112+ |
DFN5060 |
105000 |
5000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
MCC美微科 |
23+ |
DFN5060 |
22820 |
原裝正品,支持實單 |
詢價 | ||
Micro Commercial Co |
2022+ |
8-PowerVDFN |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
MCC |
22+ |
DFN5060- |
10000 |
原裝正品,渠道現(xiàn)貨 |
詢價 | ||
MCC/美微科 |
21+ |
DFN5060- |
2500 |
原裝正品 |
詢價 | ||
MCC |
24+ |
DFN5060- |
10000 |
一級代理保證進口原裝正品現(xiàn)貨假一罰十價格合理 |
詢價 | ||
MCC |
DFN5060- |
30000 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
MCC |
19+ |
DFN5060- |
745 |
原包裝原標現(xiàn)貨,假一罰十, |
詢價 |
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