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NP80N06DLD

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06DLD

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N06DLD_15

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06ELC

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06ELD

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06ELD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N06MLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP80N06MLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06MLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N06MLG

N-Channel60V(D-S)MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

供應商型號品牌批號封裝庫存備注價格
NATLINEAR/南麟
24+
TO-252-2L
156000
專營NATLINEAR南麟原裝正品保障
 詢價
R
24+
T0-220
5000
只做原裝公司現貨
 詢價
R
2020+
T0-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
RENESAS/瑞薩
TO-220
22+
6000
十年配單,只做原裝
 詢價
RENESAS/瑞薩
23+
TO-220
6000
原裝正品，支持實單
 詢價
VBsemi/臺灣微碧
T0-220
893993
集團化配單-有更多數量-免費送樣-原包裝正品現貨-正規(guī)
 詢價
RENESAS/瑞薩
2022+
TO-220
30000
進口原裝現貨供應,原裝 假一罰十
 詢價
RENESAS/瑞薩
22+
TO-220
12500
瑞薩全系列在售,終端可出樣品
 詢價
RENESAS/瑞薩
20+
TO-220
32500
現貨很近!原廠很遠!只做原裝
 詢價
RENESAS/瑞薩
22+
TO-220
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
更多NP80N06DLD供應商 更新時間2025-1-22 9:36:00

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