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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
NP80N06DLD	文件：171.96 Kbytes Page：6 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP80N06DLD	文件：243.16 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP80N06DLD_15	文件：172.53 Kbytes Page：6 Pages	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP80N06ELC	文件：235.97 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION ThisproductisN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ·Channeltemperature175degreerated ·Superlowon-stateresistance RDS(on)1=15mWMAX.(VGS=10V,ID=40	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP80N06ELD	文件：171.96 Kbytes Page：6 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·ChannelTemperature175degreerated ·SuperLowOn-stateResistance RDS(on)1=13mW(MAX.)(VGS=10V,ID=40A) RDS(on)2=17mW(MAX.)(VGS=5V,ID=40A) ·LowCiss:Ciss=2360pF(TYP.) ·Built-inGateprotectiond	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP80N06ELD	文件：307.22 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP80N06MLG	文件：333.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP80N06MLG	文件：355.07 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP80N06MLG	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP80N06MLG	文件：994.69 Kbytes Page：7 Pages	N-Channel60V(D-S)MOSFET FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
NP80N06NLG	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP80N06NLG	文件：355.07 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
NP80N06NLG	文件：242.6 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP80N06PLG	文件：306.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
NP80N06PLG	文件：1.05533 Mbytes Page：9 Pages	N-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
NP80N06PLG	文件：355.07 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
PHB80N06LT	文件：71.17 Kbytes Page：8 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP80N06LTissup	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB80N06LT	文件：72.66 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP80N06LTissup	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB80N06T	文件：70.5 Kbytes Page：8 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHP80N06LT	文件：72.66 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP80N06LTissup	PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦	Philips

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市瑞新盛科技有限公司	NP80N06G	NATLINEAR/南鱗	24+	TO-252-2L	156000	專營南鱗原裝保障	詢價(jià)
深圳市鵬和科技有限公司	NP80N06MLG	R	24+	T0-220	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳市納艾斯科技有限公司	NP80N06MLG	R	2020+	T0-220	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳市振芯物聯(lián)科技有限公司	NP80N06MLG	VBsemi/臺(tái)灣微碧	22+	T0-220	28600	只做原裝正品現(xiàn)貨假一賠十一級(jí)代理	詢價(jià)
深圳市河鋒鑫科技有限公司	NP80N06MLG	RENESAS/瑞薩	TO-220	22+	6000	十年配單,只做原裝	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	NP80N06MLG	RENESAS/瑞薩	23+	TO-220	6000	原裝正品，支持實(shí)單	詢價(jià)
中科航電（深圳）電子集團(tuán)有限公司	NP80N06MLG	VBsemi/臺(tái)灣微碧		T0-220	893993	集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	NP80N06MLG	RENESAS/瑞薩	2022+	TO-220	30000	進(jìn)口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢價(jià)
深圳市星辰微電科技有限公司	NP80N06MLG	RENESAS/瑞薩	22+	TO-220	12500	瑞薩全系列在售,終端可出樣品	詢價(jià)
深圳市安富世紀(jì)電子有限公司	NP80N06MLG	RENESAS/瑞薩	20+	TO-220	32500	現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝	詢價(jià)

更多NP80N06DLD供應(yīng)商更新時(shí)間2024-11-15 9:35:00

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