首頁 >NP82N04NLG>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
NP82N04NLG | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
NP82N04NLG | Product Scout Automotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP82N04MUGandNP82N04NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Lowi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES DrainCurrent-ID=82A@TC=25℃ DrainSourceVoltage-VDSS=40V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES DrainCurrent-ID=82A@TC=25℃ DrainSourceVoltage-VDSS=40V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP82N04MDGandNP82N04NDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.2mΩMAX.(VGS=10V,ID=41A) RDS(on)2=8.5mΩMAX.(VGS=4.5V,ID=41A) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP82N04MUGandNP82N04NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Nonlogiclevel ?Superlowon-stateresistance RDS(on)=4.2mΩMAX.(VGS=10V,ID=41A) ?Highcurrentrating ID(DC)=±82A ?Lowi | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細(xì)參數(shù)
- 型號：
NP82N04NLG
- 功能描述：
MOSFET N-CH 40V 82A TO-262
- RoHS：
是
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
-
- 標(biāo)準(zhǔn)包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點(diǎn)：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
22+ |
TO-262 |
12500 |
瑞薩全系列在售,終端可出樣品 |
詢價(jià) | ||
RENESAS/瑞薩 |
22+ |
TO-262 |
9000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu) |
詢價(jià) | ||
RENESAS/瑞薩 |
23+ |
TO-262 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
RENESAS(瑞薩)/IDT |
23+ |
TO262 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
NEC(日電電子) |
23+ |
TO262 |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價(jià) | ||
24+ |
N/A |
60000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Renesas |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Renesas |
23+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
RENESAS/瑞薩 |
23+ |
TO-262 |
33000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
Renesas Electronics America |
2022+ |
TO-262-3,長引線,I2Pak,TO-26 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) |
相關(guān)規(guī)格書
更多- NP82N04NLG-S18-AY
- NP82N04PDG-E1-AY
- NP82N04PUG-E1-AZ
- NP82N055CHE_07
- NP82N055CLE
- NP82N055DHE
- NP82N055DLE
- NP82N055EHE
- NP82N055EHE-E2-AY
- NP82N055ELE-E1-AY
- NP82N055KHE
- NP82N055KHE-E1-AZ
- NP82N055KLE
- NP82N055KLE-E2-AY
- NP82N055MHE-S18-AY
- NP82N055MLE-S18-AY
- NP82N055MUG-S18-AY
- NP82N055NHE-S18-AY
- NP82N055NLE-S18-AY
- NP82N055NUG-S18-AY
- NP82N055PUG-E1-AY/JM
- NP82N06MLG
- NP82N06NLG
- NP82N06PDG-E1-AY
- NP82N06PLG
- NP82N06PLG-E2-AY
- NP82N10PUF-E1-AY
- NP82OR
- NP82P04PLF
- NP82P04PLF-E2-AY
- NP82T103QE
- NP83
- NP83I
- NP83P04PDG-E1-AY
- NP83P04PDG-E2-AY
- NP83P06PDG-E1-AY
- NP83W
- N-P84
- NP84I
- NP84N04CHE-S12-AZ
- NP84N04DHE-S12-AY
- NP84N04EHE-E1-AY
- NP84N04KHE
- NP84N04KHE-E2-AY
- NP84N04MHE-S18-AY
相關(guān)庫存
更多- NP82N04NUG-S18-AY
- NP82N04PUG-E1-AY
- NP82N055CHE
- NP82N055CHE-S12-AZ
- NP82N055CLE-S12-AZ
- NP82N055DHE-S12-AY
- NP82N055DLE-S12-AY
- NP82N055EHE-E1-AY
- NP82N055ELE
- NP82N055ELE-E2-AY
- NP82N055KHE-E1-AY
- NP82N055KHE-E2-AY
- NP82N055KLE-E1-AY
- NP82N055MHE
- NP82N055MLE
- NP82N055MUG
- NP82N055NHE
- NP82N055NLE
- NP82N055NUG
- NP82N055PUG-E1-AY
- NP82N055PUG-E2-AZ
- NP82N06MLG-S18-AY
- NP82N06NLG-S18-AY
- NP82N06PDG-E2-AY
- NP82N06PLG-E1-AY
- NP82N10PUF
- NP82N10PUF-E2-AY
- NP82OW
- NP82P04PLF-E1-AY
- NP82R
- NP82W
- NP83AL
- NP83P04PDG
- NP83P04PDG-E1-AZ
- NP83P06PDG
- NP83P06PDG-E2-AY
- NP84
- NP84AL
- NP84N04CHE
- NP84N04DHE
- NP84N04EHE
- NP84N04EHE-E2-AY
- NP84N04KHE-E1-AY
- NP84N04MHE
- NP84N04NHE
