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ME60N06G

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MTB60N06

TMOSPOWERFET60AMPERES60VOLTS

HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB60N06HD

TMOSPOWERFET60AMPERES60VOLTS

HDTMOSE-FET?HighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswit

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB60N06HD

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTM60N06

N-CHANNELTWOSPOWERFETs

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTM60N06

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR TheseTMOSPowerFETsaredesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimes

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM60N06

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

55and60AMPERE N-ChannelTMOSPOWERFETs rDS(on)=0.04OHM80and100VOLTS rDS(on)=0.28OHM50and60VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP60N06

TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM

Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP60N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTP60N06HD

TMOSPOWERFET60AMPERES60VOLTSRDS(on)=0.014OHM

Thisadvancedhigh–celldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

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32500
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Matsuki
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MATSUKI松木
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MATSUKI松木
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MATSUKI
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更多ME60N06G供應(yīng)商 更新時(shí)間2025-2-3 14:03:00

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