零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 40VNPNSMALLSIGNALTRANSISTORINSOT23 Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMBT3906) ?IdealforMediumPowerAmplificationandSwitching ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Devic | DIODES Diodes Incorporated | DIODES | ||
SmallSignalTransistors(NPN) FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904. | GE GE Industrial Company | GE | ||
NPNGeneralPurposeAmplifier Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Capableof350mWattsofPowerDissipationand200mAIc. ?OperatingandStorageJunctionTemperatures:-55°Cto150°C ?SurfaceMountSOT-23Package ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable (MMBT3906) ?IdealforMediumPowerAmplificationand Switching | TRSYS Transys Electronics | TRSYS | ||
GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ZOWIE | ||
GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT?323/SC?70packagewhichisdesignedforlowpowersurfacemountapplications. Features ?AEC?Q101QualifiedandPPAPCapable ?SPrefixforAut | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistors ?HighDCcurrentgain:0.1mAto100mA ?Lowcollector-emittersaturationvoltage ?ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage ?Complementarytypes:SMBT3906...MMBT3906 ?SMBT3904S:Fororientat | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
GENERALPURPOSEAPPLIATION GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906 | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
NPNGeneralPurposeAmplifier | NSCNational Semiconductor (TI) 美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司 | NSC | ||
SMDGeneralPurposeTransistor(NPN) SMDGeneralPurposeTransistor(NPN) Features ?NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications ?RoHScompliance | TAITRON TAITRON Components Incorporated | TAITRON | ||
NPNSWITCHINGTRANSISTOR FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT3906). ●CollectorCurrentCapabilityICM=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification | BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES ?NPNepitaxialsilicon,planardesign ?Collector-emittervoltageVCE=40V ?CollectorcurrentIC=200mA ?Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
0.2WattsNPNPlastic-EncapsulateTransistors FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
NPNSiliconGeneralPurposeTransistor NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors MMBT3906isrecommended. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司 | SEMTECH_ELEC | ||
NPNGeneralPurposeAmplifier | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) | RECTRON Rectron Semiconductor | RECTRON | ||
NPNGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛電子深圳市平盛電子有限公司 | PFS | ||
NPNSiliconSwitchingTransistors | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
PANJIT/強(qiáng)茂 |
23+ |
SOT-363 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
PANJIT/強(qiáng)茂 |
2022 |
SOT-363 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
PANJIT |
SOT363 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
DIODES/美臺(tái) |
23+ |
SOT-363 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
PANJIT/強(qiáng)茂 |
23+ |
NA/ |
3000 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
DIODES/美臺(tái) |
SOT-363 |
90000 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
MAXIM |
24+ |
TSSOP.. |
2250 |
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時(shí)可發(fā)貨 |
詢價(jià) | ||
ON? |
24+ |
SOT-23? |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
ON |
94+ |
SOT23 |
1200 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
ON |
17+ |
SOT23 |
9988 |
只做原裝進(jìn)口,自己庫(kù)存 |
詢價(jià) |
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