MRFG35003NT1分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

RF Reference Design Library

Gallium Arsenide PHEMT

RF Power Field Effect Transistors

Device Characteristics (From Device Data Sheet)

Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications.

? Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,

IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A

@ 0.01 Probability)

Output Power — 300 mWatt

Power Gain — 11.5 dB

Efficiency — 25

? 3 Watts P1dB @ 3.55 GHz

? Excellent Phase Linearity and Group Delay Characteristics

? High Gain, High Efficiency and High Linearity

? N Suffix Indicates Lead-Free Terminations

Reference Design Characteristics

? Typical Single-Channel W-CDMA Performance: -45 dBc ACPR,

2.45 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH

(8.5 dB P/A @ 0.01 Probability)

Output Power — 350 mWatt

Power Gain — 12.5 dB

Efficiency — 26