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MUR6080PA

60.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

MUR6080PL

60.0AmpereHeatsinkDualSeriesConnectionUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

MUR6080PR

60.0AmpereHeatsinkDualDoublerPolarityUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

MUR6080PT

UltraFastRecoveryDiodes

FEATURES *InternationalstandardpackageJEDECTO-247AD *Planarpassivatedchips *Veryshortrecoverytime *Extremelylowswitchinglosses *LowIRM-values *Softrecoverybehaviour APPLICATIONS *Rectifiersinswitchmodepowersupplies(SMPS) *Uninterruptiblepowersupplies(UPS)

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MUR6080PT

UltraFastRecoveryDiodes

SIRECTSirectifier Global Corp.

矽萊克半導體深圳市矽萊克半導體有限公司

MUR6080PT

UltraFastRecoveryDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MUR6080PT

60.0AmpereHeatsinkDualCommonCathodeUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerSupply

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

NCE6080

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080A

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6.5mΩ(typical)@VGS=10V RDS(ON)=7.5mΩ(typical)@VGS=4.5V ●Highdensityce

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080AI

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AIusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080AK

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080AKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=6mΩ(typical)@VGS=10V RDS(ON)=7mΩ(typical)@VGS=4.5V ●Highdensitycell

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080AT

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)=5.5mΩ(typical)@VGS=10V RDS(ON)=6.5mΩ(typical)@VGS=4.5V ●Highdensityc

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080D

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080ED

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080EDusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080EK

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6080EKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE6080K

N-Channel60V(D-S)175?CMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

NCE6080K

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCEA6080K

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCEA6080Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

ND-6080

28-CHPPIModule

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

NJU6080

CONSTANTCURRENTLEDDRIVERwithPWMCONTROL

NJRCNew Japan Radio

新日本無線株式會社

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SUNLED
24+
LEDDISPLAY
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
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IR
1738+
TO-220
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
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IR
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IR
18+
TO-220
41200
原裝正品,現(xiàn)貨特價
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IR
2023+
TO-220
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
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NS/國半
23+
MSOP8
69820
終端可以免費供樣,支持BOM配單!
詢價
IR
23+
TO-220
10000
公司只做原裝正品
詢價
IR
TO-220
22+
6000
十年配單,只做原裝
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IR
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
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IR
23+
TO-220
8000
只做原裝現(xiàn)貨
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更多MUR6080PA供應商 更新時間2024-12-23 16:18:00