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NE3210S01

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE3210S01

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE3210S01

SUPER LOW NOISE HJ FET

CEL

California Eastern Labs

NE3210S01

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：4-SMD 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 4V 12GHZ S01

CEL

California Eastern Labs

NE3210S01-T1

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE3210S01-T1

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE3210S01-T1B

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE3210S01-T1B

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION TheNE3210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.Its excellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGain NF=0.35dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE3210S01-T1

SUPER LOW NOISE HJ FET

CEL

California Eastern Labs

NE3210S01-T1B

SUPER LOW NOISE HJ FET

CEL

California Eastern Labs

NE3210S01-T1B

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：4-SMD 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 4V 12GHZ S01

CEL

California Eastern Labs

產(chǎn)品屬性

  • 產(chǎn)品編號：

    NE3210S01

  • 制造商：

    CEL

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 晶體管類型：

    HFET

  • 頻率：

    12GHz

  • 增益：

    13.5dB

  • 額定電流（安培）：

    15mA

  • 噪聲系數(shù)：

    0.35dB

  • 封裝/外殼：

    4-SMD

  • 供應(yīng)商器件封裝：

    SMD

  • 描述：

    FET RF 4V 12GHZ S01

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Renesas
23+
SMD4000包裝
10298
NE3210S01-T1B原裝特價(jià) 射頻結(jié)柵場效應(yīng)晶體管 13.5 dB N-Channel
 詢價(jià)
NEC
21+
十字架
9513
全新原裝現(xiàn)貨誠信經(jīng)營
 詢價(jià)
2015+
2710
公司現(xiàn)貨庫存
 詢價(jià)
NEC(日電電子)
2023+
N/A
4550
全新原裝正品
 詢價(jià)
NEC
23+
SMT-86
65800
全新原裝現(xiàn)貨 假一罰十 可開17%增值稅票
 詢價(jià)
24+
3000
公司存貨
 詢價(jià)
NEC
23+
原廠原裝
9960
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
NEC
13+
SMT-86
60015
特價(jià)熱銷現(xiàn)貨庫存
 詢價(jià)
NEC
23+
SMT86
9562
詢價(jià)
CEL
17+
原廠原封
2500
原裝正品
 詢價(jià)
更多NE3210S01供應(yīng)商 更新時(shí)間2024-11-16 9:11:00

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