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NE434S01-T1B

C BAND SUPER LOW NOISE HJ FET

DESCRIPTION TheNE434S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES ?VERYLOWNOISEFIGURE:

CEL

California Eastern Labs

NE434S01-T1B

C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE434S01-T1B

C BAND SUPER LOW NOISE HJ FET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE434S01-T1

CBANDSUPERLOWNOISEHJFET

DESCRIPTION TheNE434S01isaHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAlGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandothercommercialsystems. FEATURES ?VERYLOWNOISEFIGURE:

CEL

California Eastern Labs

NE434S01-T1

CBANDSUPERLOWNOISEHJFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NE434S01-T1

CBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET

DESCRIPTION TheNE434S01isaHereroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandhighassociatedgainmakeitsuitableforTVROandanothercommercialsystems. FEATURES ?SuperLowNoiseFigure&HighAssociatedGainNF=0.3

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數

  • 型號：

    NE434S01-T1B

  • 功能描述：

    MOSFET S01 LO NO HJ FET S01 LO NO HJ FET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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更多NE434S01-T1B供應商 更新時間2024-11-15 11:10:00

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