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NE5550779A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A

Silicon Power LDMOS FET

CEL

California Eastern Labs

NE5550779A-A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-T1

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-T1A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-T1-A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-T1A-A

Silicon Power LDMOS FET

FEATURES ?HighOutputPower:Pout=38.5dBmTYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?Highpoweraddedefficiency:ηadd=66TYP.(VDS=7.5V,IDset=140mA,f=460MHz,Pin=25dBm) ?HighLineargain:GL=22.0dBTYP.(VDS=7.5V,IDset=140mA,f

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5550779A-A

Silicon Power LDMOS FET

CEL

California Eastern Labs

NE5550779A-T1

Silicon Power LDMOS FET

CEL

California Eastern Labs

NE5550779A-T1A

Silicon Power LDMOS FET

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號：

    NE5550779A

  • 制造商：

    California Eastern Laboratories(CEL)

  • 功能描述：

    SILICON POWER LDMOS FET ROHS COMPLIANT - Product that comes on tape, but is not reeled

  • 功能描述：

    IC FET LDMOS 30V 0.6A 79A-PKG

供應(yīng)商型號品牌批號封裝庫存備注價格
CEL
20+
射頻元件
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
CEL
22+
79A
9000
原廠渠道,現(xiàn)貨配單
 詢價
RENESAS/瑞薩
23+
26261
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
CEL
23+
79A
9000
原裝正品，支持實單
 詢價
CEL
2022+
79A
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
RENESAS(瑞薩)/IDT
20+
-
5000
詢價
RENESAS(瑞薩)/IDT
23+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
 詢價
Renesas
2年內(nèi)
N/A
16000
英博爾原裝優(yōu)質(zhì)現(xiàn)貨訂貨渠道商
 詢價
RENESAS(瑞薩)/IDT
23+
6000
誠信服務(wù)，絕對原裝原盤
 詢價
24+
N/A
52000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多NE5550779A供應(yīng)商 更新時間2021-9-14 10:50:00

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