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NE76184B

GaAs MES FET

LtoXBANDOSC N-CHANNELGaAsMESFET DESCRIPTION NE76184BisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity. FEATURES ?Lownoisefigure&Highassociatedgain NF=0.8dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE76184B-T1

Marking：J；GaAs MES FET

LtoXBANDOSC N-CHANNELGaAsMESFET DESCRIPTION NE76184BisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity. FEATURES ?Lownoisefigure&Highassociatedgain NF=0.8dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE76184B-T1A

Marking：J；GaAs MES FET

LtoXBANDOSC N-CHANNELGaAsMESFET DESCRIPTION NE76184BisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity. FEATURES ?Lownoisefigure&Highassociatedgain NF=0.8dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE76184A

GENERALPURPOSEFETN-CHANNELGaAsMESFET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE76184A

GaAsMESFET

GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE76184AS

GENERALPURPOSELTOX-BANDGaAsMESFET

DESCRIPTION NE76184ASisahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistorhousedinanepoxysealed,metal/ceramicpackage.Itslownoisefiguremakesthisdeviceappropriateforuseinthesecondorthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfre

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE76184A-SL

GaAsMESFET

GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE76184A-SL

GENERALPURPOSEFETN-CHANNELGaAsMESFET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE76184A-SL

GENERALPURPOSELTOX-BANDGaAsMESFET

DESCRIPTION NE76184ASisahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistorhousedinanepoxysealed,metal/ceramicpackage.Itslownoisefiguremakesthisdeviceappropriateforuseinthesecondorthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfre

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NE76184A-TI

GENERALPURPOSELTOX-BANDGaAsMESFET

DESCRIPTION NE76184ASisahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistorhousedinanepoxysealed,metal/ceramicpackage.Itslownoisefiguremakesthisdeviceappropriateforuseinthesecondorthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfre

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NE
24+
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20000
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NE
24+
SOP
1000
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NE
23+
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8215
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NE
23+
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89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
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23+
26649
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Essentra
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NA
168
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SOT-143
23+
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15659
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2023+
SOT-143
80000
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NEC
23+
TO-59
8510
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NEC
6000
面議
19
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更多NE76184B供應(yīng)商 更新時(shí)間2025-2-26 18:25:00

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