首頁 >NGTB40N60IHLWG>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NGTB40N60IHLWG | Insulated Gate Bipolar Transistor (IGBT) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NGTB40N60IHLWG | 包裝:散裝 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 40A TO247 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
IGBT Features 600V,40A VCE(sat)(typ.)=2.3V@VGE=15V,IC=40A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andotherswit | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
HighSpeedSwitching CO-PAKIGBT FEATURES *HighSpeedSwitching *LowSaturationVoltage :VCE(sat)=2.0V(@Ic=20A) *HighInputImpedance *CO-PAK,IGBTwithFRD :Trr=42nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoC | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)UFseriesprovideslowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasmotorcontrolandgeneralinverterswhereHighSpeedSwitchingisrequired. Features ?HighSpeedSwitching ?LowSa | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HighSpeedSwitching CO-PAKIGBT FEATURES *HighSpeedSwitching *LowSaturationVoltage :VCE(sat)=2.0V(@Ic=20A) *HighInputImpedance *CO-PAK,IGBTwithFRD :Trr=42nS(typ.) APPLICATIONS *AC&DCMotorcontrols *GeneralPurposeInverters *Robotics,ServoC | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription Fairchild?’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features ?HighSpeedSwitching ?LowSaturationVoltage:VCE(sat) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription Fairchild?’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features ?HighSpeedSwitching ?LowSaturationVoltage:VCE(sat) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
SGH40N60UF600VPTIGBT GeneralDescription Fairchild?’sUFseriesIGBTsprovidelowconductionandswitchinglosses.UFseriesisdesignedfortheapplicationssuchasgeneralinverterandPFCwherehighspeedswitchingisrequiredfeature. Features ?HighSpeedSwitching ?LowSaturationVoltage:VCE(sat) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedsw | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Ultra-FastIGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses. TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features ?Highspeedsw | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
40A,600VFIELDSTOPIGBT DESCRIPTION SGT40N60NPFDPNusingFieldStopIGBTtechnology,offertheoptimum performanceforinductionHeating,UPS,SMPSandPFCapplication. FEATURES 40A,600V,VCE(sat)(typ.)=1.8V@IC=40A Lowconductionloss Fastswitching Highinputimpedance | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
EnhancedBodyDiodedV/dtCapability | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
NGTB40N60IHLWG
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
散裝
- IGBT 類型:
溝槽型場(chǎng)截止
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
2.4V @ 15V,40A
- 開關(guān)能量:
400μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開/關(guān))值:
70ns/140ns
- 測(cè)試條件:
400V,40A,10 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247-3
- 描述:
IGBT 600V 40A TO247
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ONSEMI |
23+ |
IGBT/NGTB40N60IHLWG/600 |
7850 |
正邁科技原裝現(xiàn)貨授權(quán)代理主營:IC電容.二三級(jí)管原裝 |
詢價(jià) | ||
ONSEMI |
18+ |
TO-247 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
ON/安森美 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON/安森美 |
21+ |
TO-247 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
ON Semiconductor |
22+ |
TO247 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
ON/安森美 |
2022 |
TO-247 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
ON/安森美 |
23+ |
27905 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) |
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