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NJ10N60-BL

10A 600V N-CHANNEL POWER MOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ10N60F-LI

10A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

NJ10N60-LI

10A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

P10N60

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

P10N60CA

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

P10N60CAFJ

10A,600VN-CHANNELMOSFET

GENERALDESCRIPTION SVFP10N60CAFJ/FJHisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilanproprietary F-CellTMhigh-voltageplanarVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistan

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

P10N60HA

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHP10N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP10N60Eissupplied

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP10N60E

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PHP10N60FE

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

PJF10N60

600VN-ChannelEnhancementModeMOSFET

FEATURES ?10A,600V,RDS(ON)=1.0?@VGS=10V,ID=5.0A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJP10N60

600VN-ChannelEnhancementModeMOSFET

FEATURES ?10A,600V,RDS(ON)=1.0?@VGS=10V,ID=5.0A ?LowONResistance ?FastSwitching ?LowGateCharge ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS ?IncompliancewithEURoHs2002/95/ECDirectives

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

RMP10N60HD

N-CHANNELENHANCEMENTMODEPOWERMOSFET

100%AvalancheTest FastSwitchingCharacteristic SimpleDriveRequirement RoHSCompliant&Halogen-Free

RECTRON

Rectron Semiconductor

SDF10N60

SuperhighdensecelldesignforlowRDS(ON).

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

SFF10N60

N-ChannelMOSFET

semiWell

SemiWell Semiconductor

SGB10N60

HighSpeed2-Technology

?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB10N60A

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB10N60A

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGH10N60RUF

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswher

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH10N60RUFD

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFDseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFDseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY
24+
3000
詢價(jià)
Pepperl + Fuchs
2022+
1
全新原裝 貨期兩周
 詢價(jià)
VISHAY
24+
TO92
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢
 詢價(jià)
SMD
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
HCTL(華燦天祿)
21+
插件,P=2.54mm
4750
中國(guó)航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者
 詢價(jià)
HCTL
24+
con
2500
優(yōu)勢(shì)庫(kù)存,原裝正品
 詢價(jià)
HCTL
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價(jià)
NEMERIX
1736+
BGA
8298
只做進(jìn)口原裝正品假一賠十!
 詢價(jià)
NEMERIX
20+
BGA
19570
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
NEMERIX
07+
BGA
99370
原裝/現(xiàn)貨
 詢價(jià)
更多NJ10N60-BL供應(yīng)商 更新時(shí)間2025-1-11 15:30:00

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