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NP100N04PDH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP100N04PDH

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04PUH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP100N04PUH

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04PUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04PUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) ?LowCiss:Ciss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04PUK

MOSFIELDEFFECTTRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.3m?MAX.(VGS=10V,ID=50A) ?LowCissCiss=4700pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04PUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

PJD100N04

40VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJD100N04-AU

40VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

VNH100N04

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

■LINEARCURRENTLIMITATION ■THERMALSHUTDOWN ■SHORTCIRCUITPROTECTION ■INTEGRATEDCLAMP ■LOWCURRENTDRAWNFROMINPUTPIN ■DIAGNOSTICFEEDBACKTHROUGHINPUTPIN ■ESDPROTECTION ■DIRECTACCESSTOTHEGATEOFTHEPOWERMOSFET(ANALOGDRIVING) ■COMPATIBLEWITHSTAND

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

VNW100N04

??MNIFET??FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

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23+
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69820
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23+
TO263
10000
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25000
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35628
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更多NP100N04PDH供應(yīng)商 更新時(shí)間2024-11-7 10:52:00