首頁 >NP109N04PUK>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NP109N04PUK | MOS FIELD EFFECT TRANSISTOR Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75m?MAX.(VGS=10V,ID=55A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP109N04PUK | MOS FIELD EFFECT TRANSISTOR Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
NP109N04PUK | Product Scout Automotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
MOS FIELD EFFECT TRANSISTOR Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75m?MAX.(VGS=10V,ID=55A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75m?MAX.(VGS=10V,ID=55A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) ?LowCiss:Ciss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.75m?MAX.(VGS=10V,ID=55A) ?LowCissCiss=7200pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) ?HighcurrentratingID(DC)=±110A | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP109N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) ?Lowinputcapacitance Ciss=6900pFTYP. ?Designedforautomotiveapplicati | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細參數(shù)
- 型號:
NP109N04PUK
- 制造商:
RENESAS
- 制造商全稱:
Renesas Technology Corp
- 功能描述:
MOS FIELD EFFECT TRANSISTOR
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NEC |
2024 |
TO-263 |
503162 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力高端行業(yè)供應(yīng)商 |
詢價 | ||
NXP/恩智浦 |
23+ |
TO-252 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
RENESAS/瑞薩 |
22+ |
TO-263 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
R |
23+ |
TO263 |
10000 |
公司只做原裝正品 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
TO-263 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
MP-25ZPTO-263 |
32687 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
R |
23+ |
TO263 |
6000 |
原裝正品,支持實單 |
詢價 | ||
RENESAS/瑞薩 |
22+ |
TO-263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
TO-263 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 | ||
RENESAS/瑞薩 |
2022+ |
TO-263 |
30000 |
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 |
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